Picosecond spin relaxation in low-temperature-grown GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4869211
Reference26 articles.
1. Ultrafast all-optical switching in an asymmetric Fabry-Perot device using low-temperature-grown GaAs
2. Detection of terahertz radiation with low-temperature-grown GaAs-based photoconductive antenna using 1.55 μm probe
3. Carrier lifetime versus anneal in low temperature growth GaAs
4. Correlation between Defect Concentration and Carrier Lifetime of GaAs Grown by Molecular Beam Epitaxy at Different Temperatures
5. Direct observation of picosecond spin relaxation of excitons in GaAs/AlGaAs quantum wells using spin‐dependent optical nonlinearity
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Control of the Urbach band tail and interband dephasing time with post-growth annealing in low-temperature-grown GaAs;AIP Advances;2018-04
2. Role of many-body effects in the coherent dynamics of excitons in low-temperature-grown GaAs;Applied Physics Letters;2015-10-05
3. Observation of picosecond electron spin relaxation in InGaAsP by time-resolved spin-dependent pump and probe reflection measurement;physica status solidi (b);2015-04-20
4. Observation of the exciton and Urbach band tail in low-temperature-grown GaAs using four-wave mixing spectroscopy;Applied Physics Letters;2014-11-03
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