Observation of picosecond electron spin relaxation in InGaAsP by time-resolved spin-dependent pump and probe reflection measurement-Reference-Cited by-同舟云学术

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Observation of picosecond electron spin relaxation in InGaAsP by time-resolved spin-dependent pump and probe reflection measurement

Published:2015-04-20 Issue:6 Volume:252 Page:1244-1247
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Harasawa Ryo¹,Yamamoto Naoki¹,Wu Hao¹,Aritake Takanori¹,Lu Shulong²,Ji Lian²,Tackeuchi Atsushi¹

Affiliation:

1. Department of Applied Physics; Waseda University; 3-4-1 Ohkubo Shinjuku 169-8555 Tokyo Japan

2. Suzhou Institute of Nano-Tech and Nano-Bionics; Chinese Academy of Sciences; Dushu Lake Higher Education Town, Ruoshui Road 398 Suzhou Industrial Park Suzhou P.R. China

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201400321/fullpdf

Reference16 articles.

1. Spin electronics and spin computation

2. Spinodal-like decomposition of grown by gas source molecular beam epitaxy

3. High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijuction solar cells

4. Future technology pathways of terrestrial III–V multijunction solar cells for concentrator photovoltaic systems

5. Carrier recombination dynamics of MBE grown InGaAsP layers with 1eV bandgap for quadruple-junction solar cells

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of thermal annealing on electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55bulk;AIP Advances;2016-08

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