Deep-level emissions in GaAsN∕GaAs structures grown by metal organic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2748613
Reference26 articles.
1. Room-temperature continuous-wave operation of GaInNAs/GaAs laser diode
2. Room-Temperature Operation of GaInNAs/GaInP Double-Heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor Deposition
3. Effects of atomic short-range order on the electronic and optical properties of GaAsN, GaInN, and GaInAs alloys
4. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
5. Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
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1. Probing conduction band offsets and confined states at GaAs/GaAsNBi heterointerfaces;Applied Physics Letters;2023-11-06
2. Carrier Transfer of Deep‐Level Localized States in Type‐II In x Ga 1− x As/GaN y As 1− y Short‐Period Superlattice;physica status solidi (b);2019-10-03
3. Photoluminescence characterization of nonradiative recombination centers in MOVPE grown GaAs:N δ-doped superlattice structure;Optical Materials;2019-03
4. Nonradiative recombination centers in GaAs:N δ-doped superlattice revealed by two-wavelength-excited photoluminescence;Journal of Applied Physics;2018-04-28
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