Output characteristics of short‐channel polycrystalline silicon thin‐film transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358796
Reference28 articles.
1. Influence of deposition pressure on the output characteristics of low pressure chemical vapor deposited polycrystalline silicon thin‐film transistors
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3. Study on Narrow-Stripe Polycrystalline Silicon Thin-Film Transistors
4. Field-effect analysis for the determination of gap-state density and Fermi-level temperature dependence in polycrystalline silicon
5. A study of hydrogen passivation of grain boundaries in polysilicon thin-film transistors
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