Investigation of DC Characteristics in Polysilicon Nanowire Tunneling Field-Effect Transistors-Reference-Cited by-同舟云学术

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Investigation of DC Characteristics in Polysilicon Nanowire Tunneling Field-Effect Transistors

Published:2017-05-01 Issue:5 Volume:17 Page:3071-3076
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Choi Joonyong¹,Yoon Jun-Sik²,Baek Chang-Ki¹

Affiliation:

1. Department of Creative IT Engineering, POSTECH, Pohang, 790-784, Republic of Korea

2. Future IT Innovation Lab., POSTECH, Pohang, 790-784, Republic of Korea

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the 3C-SiC/SiO₂ n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltage;2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe);2022-09-18

2. Study on Random Dopant Fluctuation in Core–Shell Tunneling Field-Effect Transistors;IEEE Transactions on Electron Devices;2018-08

3. Polysilicon near-infrared photodetector with performance comparable to crystalline silicon devices;Optics Express;2017-12-19

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