A study of hydrogen passivation of grain boundaries in polysilicon thin-film transistors-Reference-Cited by-同舟云学术

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A study of hydrogen passivation of grain boundaries in polysilicon thin-film transistors

Published:1989-01 Issue:1 Volume:36 Page:101-107
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Faughnan B.,Ipri A.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/864/00021188.pdf?arnumber=21188

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4. Effect of gate barrier and channel buffer layer on electric properties and transparence of the a-IGZO thin film transistor;Microelectronics Reliability;2014-05

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