Nucleation of oxide precipitates in vacancy-containing silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1467607
Reference21 articles.
1. A theoretical study of the critical radius of precipitates and its application to silicon oxide in silicon
2. Model of partitioning of point defect species during precipitation of a misfitting compound in Czochralski silicon
3. Vacancy-Assisted Oxygen Precipitation Phenomena in Si
4. Effect of High Temperature Pre-Anneal on Oxygen Precipitates Nucleation Kinetics in Si
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