Model of partitioning of point defect species during precipitation of a misfitting compound in Czochralski silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359197
Reference18 articles.
1. The Role of Carbon and Point Defects in Silicon
2. Influence of elastic stress on the growth kinetics of planar thin‐film binary diffusion couples
3. Point Defects and Diffusion in Semiconductors
4. Thermodynamic and kinetic considerations on the equilibrium shape for thermally induced microdefects in Czochralski silicon
5. The effect of Frenkel defect formation on spherical SiO2precipitate growth in silicon wafers
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2. Prediction of Intermetallic Compound Formation Sequences in Pseudo Binary Diffusion Couples: Experimental Examinations for (Sn-xZn)/Cu (x = 2, 5, 10, 15, 20 and 25 mass%) by a Kinetic Model with Thermodynamic Data Using MDR Diagram;MATERIALS TRANSACTIONS;2014
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4. Modeling and Design of Intermetallic Electrodes for Lithium Batteries;Ceramic Transactions Series;2012-04-03
5. Intermetallic compound formation between lead-free solders (Sn) and Cu or Ni electrodes;Materials Letters;2007-04
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