Reduced coercive field in epitaxial thin film of ferroelectric wurtzite Al0.7Sc0.3N
Author:
Affiliation:
1. Materials Science Center, National Renewable Energy Laboratory, Golden, Colorado 80401, USA
2. Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, Colorado 80401, USA
Funder
Defense Advanced Research Projects Agency
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/am-pdf/10.1063/5.0043613
Reference39 articles.
1. Light-Emitting Diodes
2. High-Frequency GaN Electronic Devices
3. Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering
4. AlScN: A III-V semiconductor based ferroelectric
5. Effects of deposition conditions on the ferroelectric properties of (Al1−xScx)N thin films
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