Electromigration-driven motion of morphologically stable voids in metallic thin films: Universal scaling of migration speed with void size
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1790037
Reference24 articles.
1. Motion of Inclusion Induced by a Direct Current and a Temperature Gradient
2. Electromigration in metals
3. Electromigration and IC Interconnects
4. Copper interconnections and reliability
5. Electromigration instability: Transgranular slits in interconnects
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3. Finite-element simulation of a phase-field model for inclusion electromigration in {110}-oriented single crystal metal interconnects due to interface diffusion anisotropy;Applied Physics A;2022-06-27
4. Role of conductivity on the electromigration-induced morphological evolution of inclusions in {110}-oriented single crystal metallic thin films;Journal of Applied Physics;2019-10-28
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