Finite-element simulation of a phase-field model for inclusion electromigration in {110}-oriented single crystal metal interconnects due to interface diffusion anisotropy-Reference-Cited by-同舟云学术

Finite-element simulation of a phase-field model for inclusion electromigration in {110}-oriented single crystal metal interconnects due to interface diffusion anisotropy

Published:2022-06-27 Issue:7 Volume:128 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Dong Congcong,Huang Peizhen^ORCID,Zhang Jiaming

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

https://link.springer.com/content/pdf/10.1007/s00339-022-05754-z.pdf

Reference66 articles.

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3. L. Xia, A.F. Bower, Z. Suo et al., A finite element analysis of the motion and evolution of voids due to strain and electromigration induced surface diffusion. J. Mech. Phys. Solids. 45(9), 1473–1493 (1997)

4. E. Arzt, O. Kraft, W.D. Nix et al., Electromigration failure by shape change of voids in bamboo lines. J. Appl. Phys. 76(3), 1563–1571 (1994)

5. C.M. Tan, A. Roy, Electromigration in ULSI interconnects. Mater. Sci. Eng. R. Rep. 58(1), 1–75 (2007)

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1. A multi-phase-field model of void crossing grain boundary under electromigration-induced anisotropic surface diffusion in interconnects;European Journal of Mechanics - A/Solids;2024-07

2. Correction to: Finite-element simulation of a phase-field model for inclusion electromigration in {110}-oriented single crystal metal interconnects due to interface diffusion anisotropy;Applied Physics A;2022-07-27