Finite element simulation of inclusion evolution in interconnects due to electromigration-induced interface diffusion
Author:
Funder
Natural Science Foundation of Jiangsu Province
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering
Link
https://link.springer.com/content/pdf/10.1007/s00419-022-02314-y.pdf
Reference50 articles.
1. Li, B., Sullivan, T.D., Lee, T.C., et al.: Reliability challenges for copper interconnects. Microelectron. Reliab. 44(3), 365–380 (2004). https://doi.org/10.1016/j.microrel.2003.11.004
2. Korhonen, M.A., Paszkiet, C.A., Li, C.Y.: Mechanisms of thermal stress relaxation and stress-induced voiding in narrow aluminum-based metallizations. J. Appl. Phys. 69(12), 8083–8091 (1991). https://doi.org/10.1063/1.347457
3. Tan, C.M., Roy, A.: Electromigration in ULSI interconnects. Mater. Sci. Eng. R-Rep. 58(1–2), 1–75 (2007). https://doi.org/10.1016/j.mser.2007.04.002
4. Orio, R., Ceric, H., Selberherr, S.: A compact model for early electromigration failures of copper dual-damascene interconnects. Microelectron. Reliab. 51(9–11), 1573–1577 (2011). https://doi.org/10.1016/j.microrel.2011.07.049
5. Jing, Y., Huang, P.: Finite element simulation of the evolution process of inclusions in interconnects due to stress-induced interface migration. Comput. Mater. Sci. 177, 109574 (2020). https://doi.org/10.1016/j.commatsci.2020.109574
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