Optimal epilayer thickness for InxGa1−xAs and InyAl1−yAs composition measurement by high‐resolution x‐ray diffraction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353448
Reference18 articles.
1. Characterization of thin layers on perfect crystals with a multipurpose high resolution x-ray diffractometer
2. Epitaxial layer thickness measurements by reflection spectroscopy
3. X-ray double-crystal diffractometry of Ga1−xAlxAs epitaxial layers
4. X-ray double-crystal diffractometry of Ga1−xAlxAs epitaxial layers
5. Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers
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1. Structural and electrical properties of metamorphic nanoheterostructures with a high InAs content (37–100%) grown on GaAs and InP substrates;Crystallography Reports;2011-09
2. Sputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-11
3. Sputtering Behavior and Evolution of Depth Resolution upon Low Energy Ion Irradiation of GaAs;ECS Transactions;2010-04-16
4. Study of Te diffused into GaSb by photoluminescence and HRXRD;physica status solidi (c);2007-04
5. Determination of In concentration in InGaAs/GaAs 001 epilayers in the early stage of anisotropic stress relaxation;Journal of Alloys and Compounds;2005-09
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