Study of Te diffused into GaSb by photoluminescence and HRXRD-Reference-Cited by-同舟云学术

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Study of Te diffused into GaSb by photoluminescence and HRXRD

Published:2007-04 Issue:4 Volume:4 Page:1406-1410
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Vargas-Sanabria R.,Rosendo E.,Martínez J.,Díaz T.,Juárez H.,García G.,Rosendo-Francisco P.,Rubín M.,de Anda F.

Publisher

Wiley

Subject

Condensed Matter Physics

Reference15 articles.

1. Nature of compensating luminescence centers in Te‐diffused and ‐doped GaSb

2. Gallium antimonide device related properties

3. Luminescence from indented Te-doped GaSb crystals

4. The physics and technology of gallium antimonide: An emerging optoelectronic material

5. Luminescence properties of transition-metal-doped GaSb

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural Characterization of Carbon-implanted GaSb;Journal of Wuhan University of Technology-Mater. Sci. Ed.;2023-10

2. GaSb film growth by liquid phase epitaxy;physica status solidi (c);2010-02-19

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