Epitaxial layer thickness measurements by reflection spectroscopy-Reference-Cited by-同舟云学术

Epitaxial layer thickness measurements by reflection spectroscopy

Published:1989-05 Issue:3 Volume:18 Page:361-367
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Tarof L. E.,Miner C. J.,Springthorpe A. J.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02657984.pdf

Reference12 articles.

1. I. C. Bassignana, A. J. SpringThorpe and C. C. Tan, Inst. Phys. Conf. Ser.91, 267 (1988).

2. ASTM Standard F95.

3. D. Gaskill, J. Davis, R. Sillmon, M. Sydor, SPIE Proceedings Modem Optical Characterization Techniques for Semiconductors and Semiconductor Devices,794, ed. O. Glembocki, F. Pollak, J. Song, p. 231 (dy1987).

4. M. Gallant and A. J. SpringThorpe, First Canadian Semiconductor Technology Conference, Ottawa, August 1982.

5. M. Born, E. Wolf, Principles of Optics, Pergamon, 1970.

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