STUDY OF PASSIVATED FILMS OF GaSb

Abstract

Thin anodie oxides (5-10 μm) were formed on n-GaSb (100) substrates by electrochemical method under galvanostatic regime employing an aqueous solution (citric acid/hydrogen peroxide), at volume ratio of 5:1, changing the time of growth. The thickness and index of refraction, thermal diffusivity and quality of passivated films were obtained by IR reflectance spectroscopy, photoacoustic spectroscopy and finally photoluminescence spectroscopy.