GaN microcavity structure with dielectric distributed Bragg reflectors fabricated by using a wet-chemical etching of a (111) Si substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2236223
Reference17 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
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3. Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
4. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
5. Room Temperature Lasing at Blue Wavelengths in Gallium Nitride Microcavities
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