III-nitride vertical resonant cavity light-emitting diodes with hybrid air-gap/AlGaN-dielectric distributed Bragg reflectors-Reference-Cited by-同舟云学术

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III-nitride vertical resonant cavity light-emitting diodes with hybrid air-gap/AlGaN-dielectric distributed Bragg reflectors

Published:2019-03-01 Issue: Volume: Page:
ISSN:
Container-title:Gallium Nitride Materials and Devices XIV
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Author:

Wang Jialin,Tsou Chuan-Wei,Jeong Hoon,Park Young Jae,Detchprohm Theeradetch,Mehta Karan,Yoder P. Douglas,Dupuis Russell D.,Shen Shyh-Chiang

Publisher

SPIE

Reference13 articles.

1. 1.7-mW nitride-based vertical-cavity surface-emitting lasers using AlInN/GaN bottom DBRs;Furut,2016

2. Long wavelength MEMS tunable VCSEL with InP-InAlGaAs bottom DBR

3. 1.3-/spl mu/m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

4. Blue lasing at room temperature in an optically pumped lattice-matched AlInN/GaN VCSEL structure

5. Group-III nitride VCSEL structures grown by molecular beam epitaxy;Ng,2000

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Green and Blue Vertical‐Cavity Surface‐Emitting Lasers;Nitride Semiconductor Technology;2020-08-03

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