Room Temperature Lasing at Blue Wavelengths in Gallium Nitride Microcavities-Reference-Cited by-同舟云学术

Room Temperature Lasing at Blue Wavelengths in Gallium Nitride Microcavities

Published:1999-09-17 Issue:5435 Volume:285 Page:1905-1906
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Someya Takao¹,Werner Ralph²,Forchel Alfred²,Catalano Massimo³,Cingolani Roberto⁴,Arakawa Yasuhiko¹

Affiliation:

1. Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan.

2. Lehrstuhl für Technische Physik, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany.

3. Consiglio Nazionale delle Ricerche, Istituto Studio Materiali per l'Elettronica, Universita' di Lecce, via Arnesano 73100 Lecce, Italy.

4. Istituto Nazionale Fiscica Materia, Universita' di Lecce, Dipartimento Ingegneria Innovazione, via Arnesano 73100 Lecce, Italy.

Abstract

Lasing action has been demonstrated at blue wavelengths in vertical cavity surface-emitting lasers at room temperature. The microcavity was formed by sandwiching indium gallium nitride multiple quantum wells between nitride-based and oxide-based quarter-wave reflectors. Lasing action was observed at a wavelength of 399 nanometers under optical excitation and confirmed by a narrowing of the linewidth in the emission spectra from 0.8 nanometer below threshold to less than 0.1 nanometer (resolution limit) above threshold. The result suggests that practical blue vertical cavity surface-emitting lasers can be realized in gallium-nitride–based material systems.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference22 articles.

1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

2. ___ and G. Fasol The Blue Laser Diode (Springer Berlin 1997).

3. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

4. K. Itaya et al. ibid. p. L1315.

5. Nakamura S., et al., Appl. Phys. Lett. 69, 4056 (1996).

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