Ultralow Dark-Current and Superhigh Detectivity Ultraviolet Photodetector Based on Freestanding GaN Nanobelt Array-Reference-Cited by-同舟云学术

Ultralow Dark-Current and Superhigh Detectivity Ultraviolet Photodetector Based on Freestanding GaN Nanobelt Array

Published:2022-11-08 Issue:11 Volume:4 Page:5421-5428
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Yang Yuqing¹²,Dong Jianqi¹³,Wang Qiao⁴,Xie Yicheng¹,Liu Shishi¹,Zhao Wei⁴,Chen Zhitao⁴,Li Shuti¹^ORCID,Wu Shuanghong²,He Chenguang⁴,Zhang Kang⁴,Wang Xingfu¹^ORCID

Affiliation:

1. School of Semiconductor Science and Technology, South China Normal University, Foshan528225, China

2. School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu610054, China

3. State Key Laboratory of Bioelectronics, School of Biological Sciences & Medical Engineering, Southeast University, Nanjing210096, China

4. Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou510650, China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Guangdong Province

Guangdong Academy of Science

Science and Technology Program of Guangzhou

Guangdong Provincial Key Laboratory of Chip and Integration Technology

Key Area R&D Program of Guangzhou

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01086

Reference45 articles.

1. Bidirectional photocurrent in p–n heterojunction nanowires

2. Self‐Powered MXene/GaN van der Waals Heterojunction Ultraviolet Photodiodes with Superhigh Efficiency and Stable Current Outputs

3. Self-powered, superior high gain silicon-based near-infrared photosensing for low-power light communication

4. High-Resolution AlGaN/GaN HEMT-Based Electrochemical Sensor for Biomedical Applications

5. Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6 × 107 A/W

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