A dual-band photodetector based on a mixed-dimensional WSe<sub>2</sub>/GaN junction-Reference-Cited by-同舟云学术

A dual-band photodetector based on a mixed-dimensional WSe₂/GaN junction

Published:2024 Issue:15 Volume:12 Page:5608-5614
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Chen Shuting¹,Wang Hui¹,Yang Yuqing¹²,Liu Shishi¹,Zhu Lingyu¹,Wang Xingfu¹³,Huo Nengjie¹³^ORCID

Affiliation:

1. School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China

2. School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China

3. Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, P. R. China

Abstract

We have successfully fabricated a WSe2/GaN heterojunction with distinct bandgaps and dimensionality, enabling the development of a high-performance visible/ultraviolet dual-band photodetector.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC00215F

Reference40 articles.

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