Nitrocellulose‐Passivated SnO2 Thin Film as a Ultraviolet‐C Photodetector

Author:

Kaawash Nabeel M. S.1,Halge Devidas I.12,Narwade Vijaykiran N.34,Thabit Mohammed Y. H.1,Khanzode Pooja M.1,Dadge Jagdish W.5,Alegaonkar Prashant S.6,Bogle Kashinath A.1ORCID

Affiliation:

1. Thin film and Device Laboratory School of Physical Sciences Swami Ramanand Teerth Marathwada University Nanded 431606 India

2. Department of Physics Shri Datta Arts, Commerce and Science College Hadgaon Tq. District Nanded Hadgaon 431712 India

3. RUSA Centre for Advanced Sensor Technology Dr. Babasaheb Ambedkar Marathwada University Aurangabad 431004 India

4. Department of Physics N.E.S. Science College Nanded 431602 India

5. Department of Physics College of Engineering Pune Pune 411005 India

6. Department of Physics School of Basic and Applied Sciences Central University of Punjab Bhatinda 151001 India

Abstract

This study demonstrates the development of an ultraviolet (UV)‐C photodetector (PD) fabricated using a surface‐passivated SnO2 thin film deposited via spray pyrolysis. This PD possesses an unprecedentedly fast response speed, with both rise time and decay time of 0.3 ms. Furthermore, even when subjected to a modest UV light intensity of 6 μW cm−2, the device shows a significantly high responsivity of 1500 A W−1, external quantum efficiency of 7 × 105%, and detectivity of 1013 Jones. When compared to previously reported SnO2‐based PDs, this device exhibits consistent performance over a long working time, which may be due to the suppression of surface vacancy defects via surface passivation, as observed from structural and optical measurements. This type of PDs has the potential to be useful in wide range of applications, including industrial sensing, medical diagnostics, and environmental monitoring.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

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