Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6 × 107 A/W-Reference-Cited by-同舟云学术

Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6 × 107 A/W

Published:2021-06-14 Issue:24 Volume:118 Page:242105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Haochen¹^ORCID,Liang Fangzhou¹,Song Kang¹,Xing Chong¹,Wang Danhao¹,Yu Huabin¹,Huang Chen¹,Sun Yue¹,Yang Lei¹,Zhao Xiaolong¹,Sun Haiding¹^ORCID,Long Shibing¹^ORCID

Affiliation:

1. School of Microelectronics, University of Science and Technology of China, Hefei, Anhui 230026, China

Funder

National Natural Science Foundation of China

the Fundamental Research Funds for the Central Universities

USTC Research Funds of the Double First-Class Initiative

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0055468

Reference27 articles.

1. Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system

2. Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

3. Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications

4. Compositionally graded III-nitride alloys: building blocks for efficient ultraviolet optoelectronics and power electronics

5. Recent Progress of Heterojunction Ultraviolet Photodetectors: Materials, Integrations, and Applications

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