Scanning microwave microscopy applied to semiconducting GaAs structures-Reference-Cited by-同舟云学术

Scanning microwave microscopy applied to semiconducting GaAs structures

Published:2018-02 Issue:2 Volume:89 Page:023704
ISSN:0034-6748
Container-title:Review of Scientific Instruments
language:en
Short-container-title:Review of Scientific Instruments

Author:

Buchter Arne¹,Hoffmann Johannes¹,Delvallée Alexandra²,Brinciotti Enrico³,Hapiuk Dimitri⁴⁵,Licitra Christophe⁴⁵,Louarn Kevin²⁶,Arnoult Alexandre⁶,Almuneau Guilhem⁶,Piquemal François²^ORCID,Zeier Markus¹^ORCID,Kienberger Ferry³

Affiliation:

1. Federal Institute of Metrology METAS, Lindenweg 50, 3003 Bern-Wabern, Switzerland

2. LNE, 29 Avenue Roger Hennequin, F-78197 Trappes, France

3. Keysight Laboratories, Keysight Technologies, Inc., Gruberstrasse 40, 4020 Linz, Austria

4. Université Grenoble Alpes, 38000 Grenoble, France

5. CEA, LETI, MINATEC Campus, 38054 Grenoble, France

6. LAAS-CNRS, Université de Toulouse, CNRS, UPS, Toulouse, France

Publisher

AIP Publishing

Subject

Instrumentation

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5015966

Reference23 articles.

1. Measuring low loss dielectric substrates with scanning probe microscopes

2. Frequency-selective contrast on variably doped p-type silicon with a scanning microwave microscope

3. Spatial conductivity mapping of unprotected and capped black phosphorus using microwave microscopy

4. Charge-order domain walls with enhanced conductivity in a layered manganite

5. Nanoscale Electric Permittivity of Single Bacterial Cells at Gigahertz Frequencies by Scanning Microwave Microscopy

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