Role of the strain in the epitaxial regrowth rate of heavily doped amorphous Si films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3036899
Reference16 articles.
1. Kinetics of solid phase crystallization in amorphous silicon
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5. Kinetically Driven Growth Instability in Stressed Solids
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2. Revisiting the role of strain in solid-phase epitaxial regrowth of ion-implanted silicon;Applied Physics Express;2015-01-28
3. Solid-Phase Epitaxy;Handbook of Crystal Growth;2015
4. Maskless nano-implant of 20keV Ga+ in bulk Si(100) substrates;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-12
5. Maskless implants of 20 keV Ga+ in thin crystalline silicon on insulator;Journal of Applied Physics;2013-01-28
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