Maskless nano-implant of 20keV Ga+ in bulk Si(100) substrates-Reference-Cited by-同舟云学术

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Maskless nano-implant of 20keV Ga+ in bulk Si(100) substrates

Published:2014-12 Issue: Volume:341 Page:7-12
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Milazzo R.G.,D’Arrigo G.,Mio A.M.,Rimini E.,Spinella C.,Peto L.,Nadzeyka A.,Bauerdick S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference31 articles.

1. Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering

2. Channeling effect measurements of the recrystallization of amorphous Si layers on crystal Si;Csepregi;Phys. Lett. A,1975

3. Phase transformation and impurity redistribution during pulsed laser irradiation of amorphous silicon layers;Narayan;J. Vac. Sci. Technol.,1983

4. Solid-phase epitaxy of implanted silicon by cw Ar ion laser irradiation;Williams;Appl. Phys. Lett.,1978

5. Heat of crystallization and melting point of amorphous silicon;Donovan;Appl. Phys. Lett.,1983

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Directed Self-Assembly of Ge Quantum Dots Using Focused Si2+ Ion Beam Patterning;Scientific Reports;2018-06-19

2. Crystallization properties of Sb-rich GeSbTe alloys by in-situ morphological and electrical analysis;Materials Science in Semiconductor Processing;2017-07

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