Directed Self-Assembly of Ge Quantum Dots Using Focused Si2+ Ion Beam Patterning
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-27512-z.pdf
Reference47 articles.
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2. Wang, K. L., Cha, D., Liu, J. & Chen, C. Ge/Si self-assembled quantum dots and their optoelectronic device applications. Proc. IEEE 95, 1866–1883 (2007).
3. Nassiopoulou, A. G., Olzierski, A., Tsoi, E., Berbezier, I. & Karmous, A. Ge Quantum Dot Memory Structure with Laterally Ordered Highly Dense Arrays of Ge Dots. J. Nanosci. Nanotechnol. 7, 316–321 (2007).
4. Grützmacher, D. et al. Three-dimensional Si/Ge quantum dot crystals. Nano Lett. 7, 3150–3156 (2007).
5. Alkhatib, A. & Nayfeh, A. A Complete Physical Germanium-on-Silicon Quantum Dot Self-Assembly Process. 2–5, https://doi.org/10.1038/srep02099 (2013).
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