Solid‐phase epitaxy of implanted silicon by cw Ar ion laser irradiation-Reference-Cited by-同舟云学术

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Solid‐phase epitaxy of implanted silicon by cw Ar ion laser irradiation

Published:1978-09-15 Issue:6 Volume:33 Page:542-544
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Williams J. S.,Brown W. L.,Leamy H. J.,Poate J. M.,Rodgers J. W.,Rousseau D.,Rozgonyi G. A.,Shelnutt J. A.,Sheng T. T.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.90430

Reference13 articles.

1. Use of argon laser radiation in restoration of single-crystal state of ion-implantation-amorphized silicon surface

2. Physical and electrical properties of laser‐annealed ion‐implanted silicon

3. Spatially controlled crystal regrowth of ion‐implanted silicon by laser irradiation

4. Periodic regrowth phenomena produced by laser annealing of ion‐implanted silicon

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