Fabrication of low-defect Ge-rich SiGe-on-insulator by continuous-wave diode laser-induced recrystallization-Reference-Cited by-同舟云学术

Fabrication of low-defect Ge-rich SiGe-on-insulator by continuous-wave diode laser-induced recrystallization

Published:2018-05 Issue: Volume:744 Page:679-682
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Liu Ziheng^ORCID,Noh Shinyoung,Hao Xiaojing^ORCID,Huang Jialiang^ORCID,Ho-Baillie Anita^ORCID,Green Martin A.

Funder

Australian Government

Australian Research Council

Australian Renewable Energy Agency

Epistar Corporation

Shin Shin Natural Gas Co., Ltd.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

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4. A novel fabrication technique of ultrathin and relaxed SiGe buffer layers with high Ge fraction for Sub-100 nm strained silicon-on-insulator MOSFETs;Tsutomu;Jpn. J. Appl. Phys.,2001

5. Stacking fault generation during relaxation of silicon germanium on insulator layers obtained by the Ge condensation technique;Vincent;Appl. Phys. Lett.,2007

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