A surfactant-mediated relaxed Si0.5Ge0.5 graded layer with a very low threading dislocation density and smooth surface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124762
Reference13 articles.
1. Effect of quantum-well structures on the thermoelectric figure of merit
2. Thermal conductivity of Si–Ge superlattices
3. Significant decrease of the lattice thermal conductivity due to phonon confinement in a free-standing semiconductor quantum well
4. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si
5. Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
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