Characterization of Hetero-Epitaxial Ge Films on Si Using Multiwavelength Micro-Raman Spectroscopy-Reference-Cited by-同舟云学术

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Characterization of Hetero-Epitaxial Ge Films on Si Using Multiwavelength Micro-Raman Spectroscopy

Published:2014-11-11 Issue:2 Volume:4 Page:P9-P15
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Yoo Woo Sik,Kang Kitaek,Ueda Takeshi,Ishigaki Toshikazu,Nishigaki Hiroshi,Hasuike Noriyuki,Harima Hiroshi,Yoshimoto Masahiro,Tan Chuan Seng

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference45 articles.

1. Streetman B. G. Banerjee S. , Solid State Electronic Devices, 6th Ed., Prentice Hall, Upper Saddle River, N. J. (2006).

2. Ge on Si(001)––a hetero epitaxial playground for surface science

3. Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures

4. Raman study of strain relaxation in Ge on Si

5. Growth and characterization of germanium epitaxial film on silicon (001) using reduced pressure chemical vapor deposition

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1. Structural analysis of sputtered amorphous silica thin films: A Raman spectroscopy investigation;Thin Solid Films;2021-09

2. Thermal Silicidation of Ni/SiGe and Characterization of Resulting Nickel Germanosilicides;ECS Journal of Solid State Science and Technology;2020-11-16

3. Evaluation of the mechanical properties of germanium-on-insulator (GeOI) films by Raman spectroscopy and nanoindentation;Journal of Applied Physics;2020-08-14

4. A self-aligned dry etching method for mechanical strain enhancement of germanium and its uniformity improvement for photonic applications;Silicon Photonics XIII;2018-02-22

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