Evaluation of the mechanical properties of germanium-on-insulator (GeOI) films by Raman spectroscopy and nanoindentation-Reference-Cited by-同舟云学术

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Evaluation of the mechanical properties of germanium-on-insulator (GeOI) films by Raman spectroscopy and nanoindentation

Published:2020-08-14 Issue:6 Volume:128 Page:065104
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Mohammed Y. S.¹²,Zhang Kai²,Heissler S.³,Baumgart H.²⁴^ORCID,Elmustafa A. A.¹²^ORCID

Affiliation:

1. Department of Mechanical and Aerospace Engineering, Old Dominion University, Norfolk, Virginia 23529, USA

2. Applied Research Center, Thomas Jefferson Lab, Newport News, Virginia 23606, USA

3. Karlsruhe Institute of Technology (KIT), Institute of Functional Interfaces - (IFG), D-76344 Eggenstein-Leopoldshafen, Germany

4. Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, Virginia 23529, USA

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0013454

Reference24 articles.

1. Highly-Strained Silicon-On-Insulator Development

2. Strained Si on insulator technology: from materials to devices

3. Wafer-Level Stress in Combination with Process Induced Stress for Optimum Performance Enhancement

4. Tensilely Strained Ge Films on Si Substrates Created by Physical Vapor Deposition of Solid Sources

5. Making germanium, an indirect band gap semiconductor, suitable for light-emitting devices

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microwear mechanism of monocrystalline germanium;Wear;2022-04

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