All-perovskite-oxide ferroelectric memory transistor composed of Bi2Sr2CuOx and PbZr0.5Ti0.5O3 films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1370999
Reference16 articles.
1. A new solid state memory resistor
2. Nonvolatile ferroelectric-gate field-effect transistors using SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures
3. Local, Nonvolatile Electronic Writing of Epitaxial Pb(Zr 0.52 Ti 0.48 )O 3 /SrRuO 3 Heterostructures
4. Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures
5. Ferroelectric Field Effect in Epitaxial Thin Film Oxide SrCuO 2 /Pb(Zr 0.52 Ti 0.48 )O 3 Heterostructures
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2. Transport Properties of Anatase–TiO2Polycrystalline-Thin-Film Field-Effect Transistors with Electrolyte Gate Layers;Japanese Journal of Applied Physics;2013-11-01
3. Eggshell membrane-templated synthesis of highly crystalline perovskite ceramics for solid oxidefuelcells;J. Mater. Chem.;2011
4. Piezoelectrically induced resistance modulations in La0.7Sr0.3MnO3∕Pb(Zr,Ti)O3 field effect devices;Applied Physics Letters;2005-10-17
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