Nonvolatile ferroelectric-gate field-effect transistors using SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124446
Reference8 articles.
1. Proposal of Adaptive-Learning Neuron Circuits with Ferroelectric Analog-Memory Weights
2. Interaction ofPbTiO3Films with Si Substrate
3. Nonvolatile memory operations of metal-ferroelectric-insulator-semiconductor (MFIS) FETs using PLZT/STO/Si(100) structures
4. Preparation ofSrBi2Ta2O9Film at Low Temperatures and Fabrication of a Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor UsingAl/SrBi2Ta2O9/CeO2/Si(100)Structures
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