Piezoelectrically induced resistance modulations in La0.7Sr0.3MnO3∕Pb(Zr,Ti)O3 field effect devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2108129
Reference14 articles.
1. Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures
2. All-perovskite-oxide ferroelectric memory transistor composed of Bi2Sr2CuOx and PbZr0.5Ti0.5O3 films
3. Strontium titanate resistance modulation by ferroelectric field effect
4. Unusual Electric Field Effects in Nd0.7Sr0.3MnO3
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