Comparison of carrier dynamics in GaN quantum dots and GaN quantum wells embedded in low-Al-content AlGaN waveguides
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2420776
Reference14 articles.
1. Optical properties of strained-layer superlattices with growth axis along [111]
2. Spontaneous polarization and piezoelectric constants of III-V nitrides
3. Recombination dynamics in InGaN quantum wells
4. Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells
5. “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
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2. Two-Pulse Photoluminescence Correlation Technique for Studying Ultrafast Carrier Dynamics in Deep-UV Few Monolayer Thick Nitride Quantum Wells;Conference on Lasers and Electro-Optics;2017
3. Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs;SPIE Proceedings;2014-03-08
4. A comparison of the recombination efficiency in green-emitting InGaN quantum dots and quantum wells;Journal of the Korean Physical Society;2012-05
5. Mechanism of GaN quantum dot overgrowth by Al0.5Ga0.5N: Strain evolution and phase separation;Journal of Applied Physics;2012-04-15
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