A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures

Author:

Cho Jong-Hoi12345,Lim Seung-Hyuk12345,Jang Min-Ho12345,Lee Chulwon12345,Yeo Hwan-Seop12345,Sim Young Chul12345,Kim Je-Hyung12345,Matta Samuel678910,Alloing Blandine678910,Leroux Mathieu678910,Park Seoung-Hwan1112135,Brault Julien678910,Cho Yong-Hoon12345ORCID

Affiliation:

1. Department of Physics

2. KI for the NanoCentury

3. Korea Advanced Institute of Science and Technology (KAIST)

4. Daejeon 34141

5. Republic of Korea

6. Université Côte d'Azur

7. CNRS

8. CRHEA

9. 06560 Valbonne

10. France

11. Department of Electronics Engineering

12. Catholic University of Daegu

13. Kyeongsan 38430

Abstract

Broadband ultraviolet solid-state light emitter has been demonstrated based on the combined structure of MOCVD grown microstructure and the MBE grown quantum dots, thanks to the strain inhomogeneity of the multi-facet semiconductor microstructure.

Funder

National Research Foundation of Korea

Agence Nationale de la Recherche

Samsung

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

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