Thermionic emission model for the initial regime of silicon oxidation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98861
Reference22 articles.
1. Models for the oxidation of silicon
2. Transport processes during the growth of oxide films at elevated temperature
3. General Relationship for the Thermal Oxidation of Silicon
4. Separation of the Linear and Parabolic Terms in the Steam Oxidation of Silicon
5. DEVIATIONS FROM PARABOLIC GROWTH IN THE THERMAL OXIDATION OF SILICON
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