Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation‐doped heterojunctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95784
Reference12 articles.
1. Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures
2. Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structures
3. Energy-gap discontinuities and effective masses forGaAs−AlxGa1−xAsquantum wells
4. Observation of Superlattice Effects on the Electronic Bands of Multilayer Heterostructures
5. Electronic states and thicknesses of GaAs/GaAlAs quantum wells as measured by electroreflectance and spectroscopic ellipsometry
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