Optical spectroscopy analysis of the near surface depletion layer in AlGaAs/GaAs heterostructures grown by MBE-Reference-Cited by-同舟云学术

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Optical spectroscopy analysis of the near surface depletion layer in AlGaAs/GaAs heterostructures grown by MBE

Published:2017-11 Issue: Volume:477 Page:59-64
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Cortes-Mestizo I.E.,Briones E.,Yee-Rendón C.M.,Zamora Peredo L.,Espinosa-Vega L.I.,Droopad R.,Méndez-García Victor H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference33 articles.

1. MBE growth of strain-compensated InGaAs/InAlAs/InP quantum cascade lasers;Gutowski;J. Cryst. Growth,2017

2. Growth of InGaAsP solar cells and their application to triple-junction top cells used in smart stack multijunction solar cells;Sugaya;J. Vac. Sci. Technol., B,2017

3. Structure characterization of MHEMT heterostructure elements with In0.4Ga0.6As quantum well grown by molecular beam epitaxy on GaAs substrate using reciprocal space mapping;Aleshin;Crystallogr. Rep.,2016

4. Thermal resistance reduction in high power superluminescent diodes by using active multi-mode interferometer;Zang;Appl. Phys. Lett.,2012

5. High-power (>110mW) superluminescent diodes by using active multimode interferometer;Zang;IEEE Photon. Technol. Lett.,2010

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1. The different characteristics of dark and bright configurations of photoreflectance based on grating spectrometer;J INFRARED MILLIM W;2024

2. Optical analysis of tin-doped GaNAs layers grown on GaAs by molecular beam epitaxy;Journal of Materials Science: Materials in Electronics;2023-03

3. Optimization of GaAs-based 940 nm infrared light emitting diode with dual-junction design;Optoelectronics Letters;2019-03

4. Design and microelectronic analysis of Au/ZnTe:I/CdTe:I/GaAs/In photosensor for optoelectronic applications using MBE technology;Journal of Materials Science: Materials in Electronics;2019-02-04

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