Relaxation in tensile‐strained InAlSb/InSb heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358894
Reference23 articles.
1. Observation of resonant tunneling in InSb/AlInSb double‐barrier structures
2. Optical nonlinearities due to subband structures in Al0.08In0.92Sb/InSb superlattices
3. On the mechanisms of strain release in molecular‐beam‐epitaxy‐grown InxGa1−xAs/GaAs single heterostructures
4. Residual strain measurements in thick InxGa1−xAs layers grown on GaAs (100) by molecular beam epitaxy
5. Residual strain analysis of InxGa1−xAs/GaAs heteroepitaxial layers
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1. Molecular beam epitaxy grown In[sub 1−x]Al[sub x]Sb∕InSb structures for infrared detectors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006
2. Third-generation infrared detector program at SCD;SPIE Proceedings;2004-08-30
3. Crack formation in tensile InGaAs/InP layers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
4. A Systematic Investigation of Strain Relaxation, Surface Morphology and Defects in Tensile and Compressive InGaAs/InP Layers;MRS Proceedings;1999
5. Transmission electron microscopy characterization of InAlSb/InSb bilayers and superlattices;Micron;1997-04
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