On the mechanisms of strain release in molecular‐beam‐epitaxy‐grown InxGa1−xAs/GaAs single heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344335
Reference31 articles.
1. Crystal Interfaces. Part II. Finite Overgrowths
2. Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds
3. Defects in epitaxial multilayers
4. Defects associated with the accommodation of misfit between crystals
5. Atomistic Monte Carlo calculation of critical layer thickness for coherently strained siliconlike structures
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