Dislocation gliding and cross-hatch morphology formation in AIII-BV epitaxial heterostructures-Reference-Cited by-同舟云学术

Dislocation gliding and cross-hatch morphology formation in AIII-BV epitaxial heterostructures

Published:2014-12-08 Issue:23 Volume:105 Page:231608
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kovalskiy V. A.¹,Vergeles P. S.¹,Eremenko V. G.¹,Fokin D. A.²,Dorokhin M. V.³^ORCID,Danilov Yu. A.³,Zvonkov B. N.³

Affiliation:

1. Institute of Microelectronics Technology and High-Purity Materials Russian Academy of Sciences, Academician Ossipyan str. 6, Chernogolovka, Moscow Region, 142432, Russia

2. Bruker Nano Surface Division, Pyatnitskaya str. 50/2, build. 1, Moscow 119017, Russia

3. Physical-Technical Research Institute, University of Nizhni Novgorod, pr. Gagarina 23/3, Nizhni Novgorod 603950, Russia

Funder

Russian Foundation for Basic Research (RFBR)

Ministry of Education and Science of the Russian Federation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4904343

Reference21 articles.

1. On the nature of cross‐hatch patterns on compositionally graded Si1−xGexalloy layers

2. Structure and recombination in InGaAs/GaAs heterostructures

3. Strain and surface morphology in lattice-matched ZnSe/InxGa1−xAs heterostructures

4. Surface ripples, crosshatch pattern, and dislocation formation: Cooperating mechanisms in lattice mismatch relaxation

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