Synthesis andin situcharacterization of low-resistivity TaNx films by remote plasma atomic layer deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2798598
Reference44 articles.
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3. Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions
4. Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
5. Diffusion barrier properties of very thin TaN with high nitrogen concentration
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