A study on plasma parameters in Ar/SF6 inductively coupled plasma
Author:
Affiliation:
1. Department of Electrical Engineering, Hanyang University, Seoul 133-791, South Korea
2. Center for Vacuum Technology, Korea Research Institute of Standard and Science, Daejeon 305-340, South Korea
Publisher
AIP Publishing
Subject
Condensed Matter Physics
Reference38 articles.
1. Spectrometry of 0.46 and 13.56MHz Ar∕SF6 inductive plasma discharges
2. Advanced silicon etching using high-density plasmas
3. Deep anisotropic etching of silicon
4. Cryogenic etch process development for profile control of high aspect-ratio submicron silicon trenches
5. Selective and deep plasma etching of SiO[sub 2]: Comparison between different fluorocarbon gases (CF[sub 4], C[sub 2]F[sub 6], CHF[sub 3]) mixed with CH[sub 4] or H[sub 2] and influence of the residence time
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