Reaction Mechanisms during Atomic Layer Deposition of AlF3 Using Al(CH3)3 and SF6 Plasma
Author:
Affiliation:
1. Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
2. Oxford Instruments Plasma Technology, North End, Bristol BS49 4AP, United Kingdom
Funder
Nederlandse Organisatie voor Wetenschappelijk Onderzoek
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
http://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c10695
Reference85 articles.
1. Optical transitions in disordered thin films of the ionic compounds MgF_2 and AlF_3 as a function of their conditions of preparation
2. Determination of the optical constants of MgF_2 and ZnS from spectrophotometric measurements and the classical oscillator method
3. Fluoride compounds for IR coatings
4. Experimental determination of optical constants of MgF2 and AlF3 thin films in the vacuum ultra-violet wavelength region (60–124nm), and its application to optical designs
5. Fabrication of Artificially Stacked Ultrathin ZnS/MgF2 Multilayer Dielectric Optical Filters
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