Enhancement of resistive switching ratio induced by competing interfacial oxygen diffusion in tantalum oxide based memories with metal nitride electrode-Reference-Cited by-同舟云学术

Enhancement of resistive switching ratio induced by competing interfacial oxygen diffusion in tantalum oxide based memories with metal nitride electrode

Published:2018-07-23 Issue:4 Volume:113 Page:043503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hu Lei¹²,Zhu Shengju¹²,Wei Qi¹²,Chen Yan¹²,Yin Jiang¹²,Xia Yidong¹²,Liu Zhiguo¹²

Affiliation:

1. National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

2. Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5037840

Reference28 articles.

1. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

2. Oxide Heterostructure Resistive Memory