Self-Limited Switching in Ta2O5/TaOxMemristors Exhibiting Uniform Multilevel Changes in Resistance-Reference-Cited by-同舟云学术

Self-Limited Switching in Ta2O5/TaOxMemristors Exhibiting Uniform Multilevel Changes in Resistance

Published:2015-01-23 Issue:10 Volume:25 Page:1527-1534
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Kim Kyung Min¹,Lee Seung Ryul¹,Kim Sungho¹,Chang Man¹,Hwang Cheol Seong²

Affiliation:

1. Samsung Advanced Institute of Technology; San 14-1, Nongseo-dong, Giheung-gu Yongin-si Gyeonggi-do 446-712 Republic of Korea

2. Department of Materials Science and Engineering and Inter-university Semiconductor Research Center; College of Engineering; Seoul National University; Seoul 151-744 Republic of Korea

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201403621/fullpdf

Reference42 articles.

1. Memristor-The missing circuit element

2. The missing memristor found

3. Memristive switching mechanism for metal/oxide/metal nanodevices

4. Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors

5. The elusive memristor: properties of basic electrical circuits

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