Intrinsic reoxidation of microwave plasma-nitrided gate dielectrics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1895486
Reference12 articles.
1. Formation of Inorganic Films by Remote Plasma-Enhanced Chemical-Vapor Deposition
2. Ultrathin nitrogen-profile engineered gate dielectric films
3. Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked “N–O–N” gate dielectrics
4. Growth and characterization of ultrathin nitrided silicon oxide films
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2. Change in band alignment of HfO[sub 2] films with annealing treatments;Applied Physics Letters;2008
3. Change in Depth Profile of N Highly Incorporated into SiO[sub 2] by Plasma-Assisted Nitridation;Electrochemical and Solid-State Letters;2006
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