Ultrathin nitrogen-profile engineered gate dielectric films-Reference-Cited by-同舟云学术

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Ultrathin nitrogen-profile engineered gate dielectric films

Published: Issue: Volume: Page:
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Container-title:International Electron Devices Meeting. Technical Digest
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Author:

Hattangady S.V.,Kraft R.,Grider D.T.,Douglas M.A.,Brown G.A.,Tiner P.A.,Kuehne J.W.,Nicollian P.E.,Pas M.F.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/4251/12029/00553846.pdf?arnumber=553846

Cited by 54 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dielectric breakdown of oxide films in electronic devices;Nature Reviews Materials;2024-08-07

2. Conduction mechanisms responsible for leakage currents in RF sputtered HfO2 high-κ gate-oxide thin film MOS capacitors;Materials Science and Engineering: B;2021-03

3. Atomic Layer Deposition (ALD) of Metal Gates for CMOS;Applied Sciences;2019-06-11

4. On the Prediction of the Threshold Voltage Degradation in CMOS Technology Due to Bias-Temperature Instability;Electronics;2018-12-11

5. Dielectric Materials for Microelectronics;Springer Handbook of Electronic and Photonic Materials;2017

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